Materials Irradiation Effect Group

Brief Introduction

The research of the Materials Irradiation Effect Group is based on the high-energy heavy ions provided by HIRFL. The fundamental study is to better understand the behaviors and effects of swift heavy ions in solid materials. These materials including two-dimensional materials, semiconductor materials, insulating materials etc., have been systematically investigated by heavy ions of different electronic energy losses. The mechanisms of single event effects of electronic devices have been studied in recent years. The micro-region analysis of the sample, single-ion irradiation, and on-line living cell imaging are carried out by heavy ion microbeams. The experimental terminals have been established and the relevant experimental techniques have been improved continuously. 

Research Fields

1. Irradiation effects of materials induced by swift heavy ions 

 (1) Modification of two-dimensional materials and track formation 

 (2) Irradiation effects of wide-gap semiconductors 

 (3) New effects and computer simulation 

 (4) Materials under the extreme conditions 

2. Single event effects of electronic devices 

 (1) Heavy ion induced degradation and failure conditions of novel electronic devices 

 (2) SEE sensitivity evaluation of advanced CMOS-based memory and non-volatile memory 

 (3) Computer simulation of interaction between heavy ions and electronic devices 

3. High energy ion beam imaging technology and DNA damage and repair 

 (1) High energy ion beam imaging technology and application  

 (2)  DNA damage and repairing 

 (3)  Micro/nano material applications of ion irradiation 

4. Irradiation experimental technique   

 (1) Heavy ion irradiation beamline construction 

 (2)  Heavy ion detection technique  

 (3) High temperature and high pressure irradiation technique 

Achievements

1. B. Ye, L. Mo, T. Liu, J. Luo, D. Li, P. Zhao, et al., "Geant4 simulation of proton-induced single event upset in three-dimensional die-stacked SRAM device," Chinese Physics B, vol. 25, p. 26101, 2020. 

2. Q. An, R. Asfandiyarov, P. Azzarello, P. Bernardini, X. Bi, M. Cai, et al., "Measurement of the cosmic ray proton spectrum from 40 GeV to 100 TeV with the DAMPE satellite," Science Advances, vol. 5, p. eaax3793, 2019. 

3. Y. Li, G. Du, G. Mao, J. Guo, J. Zhao, R. Wu, et al., "Electrical Field Regulation of Ion Transport in Polyethylene Terephthalate Nanochannels," ACS applied materials & interfaces, vol. 11, pp. 38055-38060, 2019. 

4. J. Zeng, J. Liu, S. Zhang, J. Duan, P. Zhai, H. Yao, et al., "Graphene electrical properties modulated by swift heavy ion irradiation," Carbon, vol. 154, pp. 244-253, 2019. 

5. Z. Li, J. Liu, P. Zhai, T. Liu, J. Bi, Z. Zhang, et al., "Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization," IEEE Electron Device Letters, vol. 40, pp. 1634-1637, 2019. 

6. J. Yun, Y. Zuo, J. Mao, M. Chang, S. Zhang, J. Liu, et al., "Lowering critical current density for spin-orbit torque induced magnetization switching by ion irradiation," Applied Physics Letters, vol. 115, p. 032404, 2019. 

7. W. Lin, H. Liu, H. Huang, J. Huang, K. Ruan, Z. Lin, et al., "Enhanced continuous liquid interface production with track-etched membrane," Rapid Prototyping Journal, vol. 25, pp. 117-125, 2019. 

8. S. Zhang, J. Liu, J. Zeng, P. Hu, K. Maaz, L. Xu, et al., "Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation," Journal of Physics D: Applied Physics, vol. 52, p. 125102, 2019. 

9. C. Cai, X. Fan, J. Liu, D. Li, T. Liu, L. Ke, et al., "Heavy-ion induced single event upsets in advanced 65 nm radiation hardened FPGAs," Electronics, vol. 8, p. 323, 2019. 

10. Y. Yin, J. Liu, T.-q. Liu, B. Ye, Q. Ji, Y. Sun, et al., "Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories," Microelectronics Reliability, vol. 102, p. 113450, 2019. 

11. C. Cai, P. Zhao, L. Xu, T. Liu, D. Li, L. Ke, et al., "SEU tolerance improvement in 22 nm UTBB FDSOI SRAM based on a simple 8T hardened cell," Microelectronics Reliability, vol. 100, p. 113322, 2019. 

12. P. Zhao, T. Liu, C. Cai, D. Li, Q. Ji, Z. He, et al., "Heavy ion irradiation induced hard error in MTJ of the MRAM memory array," Microelectronics Reliability, vol. 100, 2019. 

13. Q. Ji, J. Liu, D. Li, T. Liu, B. Ye, P. Zhao, et al., "Effects of total ionizing dose on single event effect sensitivity of FRAMs," Microelectronics Reliability, vol. 95, pp. 1-7, 2019. 

14. W. Ai, L. Xu, S. Nan, P. Zhai, W. Li, Z. Li, et al., "Radiation damage in β-Ga2O3 induced by swift heavy ions," Japanese Journal of Applied Physics, vol. 58, p. 120914, 2019. 

15. C. Cai, T. Liu, P. Zhao, X. Fan, H. Huang, D. Li, et al., "Multiple Layout-Hardening Comparation of SEU Mitigated Filp-Flops in 22 nm UTBB FD-SOI Technology," IEEE Transactions on Nuclear Science, vol. 67, pp. 374-381, 2019. 

16. M. Ding, Y. Zhang, Y. Zhang, Y. Wang, T. Dong, A. De Benedittis, et al., "Calibration of the DAMPE Plastic Scintillator Detector and its on-orbit performance," Research in Astronomy and Astrophysics, vol. 19, p. 047, 2019. 

17. P. Zhai, S. Nan, L. Xu, W. Li, Z. Li, P. Hu, et al., "Fine structure of swift heavy ion track in rutile TiO2," Nuclear Inst & Methods in Physics Research B, vol. 457, pp. 72-79, 2019. 

18. A. Ponomarov, G. Du, J. Guo, W. Liu, R. Wu, Y. Li, et al., "Beam optics of upgraded high energy heavy ion microbeam in Lanzhou," Nuclear Inst & Methods in Physics Research B, vol. 461, pp. 10-15, 2019. 

19. W. Yang, X. Du, J. Guo, J. Wei, G. Du, C. He, et al., "Preliminary single event effect distribution investigation on 28 nm SoC using heavy ion microbeam," Nuclear Inst & Methods in Physics Research B, vol. 450, pp. 323-326, 2019. 

20. S.-X. Zhang, J. Liu, H. Xie, L.-J. Xu, P.-P. Hu, J. Zeng, et al., "Vibrational modes in La2Zr2O7 pyrochlore irradiated with disparate electrical energy losses," Chinese Physics B, vol. 28, p. 116102, 2019. 

21. C. Cai, T.-Q. Liu, X.-Y. Li, J. Liu, Z.-G. Zhang, C. Geng, et al., "Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs," Nuclear Science and Techniques, vol. 30, p. 80, 2019. 

22. P. Wang, M. Wang, F. Liu, S. Ding, X. Wang, G. Du, et al., "Ultrafast ion sieving using nanoporous polymeric membranes," Nature communications, vol. 9, pp. 1-9, 2018. 

23. S. Zhang, J. Liu, P. Hu, J. Zeng, K. Maaz, P. Zhai, et al., "Investigations of nano-defect morphology and vibrational spectra of swift heavy ion irradiated muscovite mica," Surface and Coatings Technology, vol. 355, pp. 186-190, 2018. 

24. T. Liu, J. Liu, K. Xi, Z. Zhang, D. He, B. Ye, et al., "Heavy Ion Radiation Effects on a 130-nm COTS NVSRAM Under Different Measurement Conditions," IEEE Transactions on Nuclear Science, vol. 65, pp. 1119-1126, 2018. 

25. S. Gu, J. Liu, J. Bi, F. Zhao, Z. Zhang, K. Xi, et al., "The impacts of heavy ion energy on single event upsets in SOI SRAMs," IEEE Transactions on Nuclear Science, vol. 65, pp. 1091-1100, 2018. 

26. S. Zhang, J. Liu, J. Zeng, P. Hu, L. Xu, K. Maaz, et al., "Dynamic evolutions of swift heavy ion induced latent tracks under electron bombardment from TEM," Nuclear Inst & Methods in Physics Research B, vol. 429, pp. 9-13, 2018. 

27. P. Hu, J. Liu, S. Zhang, K. Maaz, J. Zeng, P. Zhai, et al., "Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks," Nuclear Inst & Methods in Physics Research B, vol. 430, pp. 59-63, 2018. 

28. Y. Yin, J. Liu, Y. Sun, M. Hou, T. Liu, B. Ye, et al., "Anomalous annealing of floating gate errors due to heavy ion irradiation," Nuclear Inst & Methods in Physics Research B, vol. 418, pp. 80-86, 2018. 

29. P. P. Hu, J. Liu, S. X. Zhang, K. Maaz, J. Zeng, P. F. Zhai, et al., "Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks," Nuclear Inst & Methods in Physics Research B, vol. 430, pp. 59-63, 2018. 

30. Y. Yin, J. Liu, Q. Ji, P. Zhao, T. Liu, B. Ye, et al., "Influences of total ionizing dose on single event effect sensitivity in floating gate cells," Chinese Physics B, vol. 27, p. 086103, 2018. 

31. J. Luo, T. Wang, D. Li, T. Liu, M. Hou, Y. Sun, et al., "Investigation of flux dependent sensitivity on single event effect in memory devices," Chinese Physics B, vol. 27, p. 076101, 2018. 

32. G. Ambrosi, Q. An, R. Asfandiyarov, P. Azzarello, P. Bernardini, B. Bertucci, et al., "Direct detection of a break in the teraelectronvolt cosmic-ray spectrum of electrons and positrons," Nature, vol. 552, p. 63, 2017. 

33. Y. Yu, Z. Sun, H. Su, Y. Yang, J. Liu, J. Kong, et al., "The plastic scintillator detector for DAMPE," Astroparticle Physics, vol. 94, pp. 1-10, 2017. 

34. W. Liu, G. Du, J. Guo, R. Wu, J. Wei, H. Chen, et al., "Influence of the environment and phototoxicity of the live cell imaging system at IMP microbeam facility," Nuclear Inst & Methods in Physics Research B, vol. 404, pp. 125-130, 2017. 

35. J. Guo, G. Du, J. Bi, W. Liu, R. Wu, H. Chen, et al., "Development of single-event-effects analysis system at the IMP microbeam facility," Nuclear Inst & Methods in Physics Research B, vol. 404, pp. 250-253, 2017. 

36. J. Wei, G. Du, J. Guo, Y. Li, W. Liu, H. Yao, et al., "The rectification of mono-and bivalent ions in single conical nanopores," Nuclear Inst & Methods in Physics Research B, vol. 404, pp. 219-223, 2017. 

37. T. Liu, Z. Yang, J. Guo, G. Du, T. Tong, X. Wang, et al., "Application of SEU imaging for analysis of device architecture using a 25 MeV/u 86Kr ion microbeam at HIRFL," Nuclear Inst & Methods in Physics Research B, vol. 404, pp. 254-258, 2017. 

38. J. L. Duan, D. Y. Lei, F. Chen, S. P. Lau, W. I. Milne, M. Toimil-Molares, et al., "Vertically-aligned single-crystal nanocone arrays: Controlled fabrication and enhanced field emission," ACS applied materials & interfaces, vol. 8, pp. 472-479, 2016. 

39. P. Zhai, J. Liu, J. Zeng, J. Duan, L. Xu, H. Yao, et al., "Evidence for re-crystallization process in the irradiated graphite with heavy ions obtained by Raman spectroscopy," Carbon, vol. 101, pp. 22-27, 2016. 

40. J. Zeng, J. Liu, H. J. Yao, P. F. Zhai, S. X. Zhang, H. Guo, et al., "Comparative study of irradiation effects in graphite and graphene induced by swift heavy ions and highly charged ions," Carbon, vol. 100, pp. 16-26, 2016. 

41. K. Xi, C. Geng, Z. Zhang, M. Hou, Y. Sun, J. Luo, et al., "Monte Carlo predictions of proton SEE cross-sections from heavy ion test data," Chinese physics C, vol. 40, p. 066001, 2016. 

42. H. Guo, Y. Sun, P. Zhai, H. Yao, J. Zeng, S. Zhang, et al., "Swift-heavy ion irradiation-induced latent tracks in few-and mono-layer MoS2," Applied Physics A, vol. 122, p. 375, 2016. 

43. N. Guo, G. Du, W. Liu, J. Guo, R. Wu, H. Chen, et al., "Live cell imaging combined with high-energy single-ion microbeam," Review of Scientific Instruments, vol. 87, p. 034301, 2016. 

44. Y. Gu, W. Jie, C. Rong, L. Xu, Y. Xu, H. Lv, et al., "Study on the bias-dependent effects of proton-induced damage in CdZnTe radiation detectors using ion beam induced charge microscopy," Micron, vol. 88, pp. 54-59, 2016. 

45. P. P. Hu, J. Liu, S. X. Zhang, K. Maaz, J. Zeng, H. Guo, et al., "Raman investigation of lattice defects and stress induced in InP and GaN films by swift heavy ion irradiation," Nuclear Inst & Methods in Physics Research B, vol. 372, pp. 29-37, 2016. 

46. Y. Gu, W. Jie, C. Rong, Y. Wang, L. Xu, Y. Xu, et al., "Correlated analysis of 2 MeV proton-induced radiation damage in CdZnTe crystals using photoluminescence and thermally stimulated current techniques," Nuclear Inst & Methods in Physics Research B, vol. 386, pp. 16-21, 2016. 

47. N. Guo, W. Liu, J. Guo, R. Wu, H. Chen, "Microbeam Application in Radiation Biology," Nuclear Physics Review, vol. 33, pp. 471-480, 2016. 

Photos

Contact

Prof. LIU Jie 

Tel: +86-931-4969334 

Email: j.liu@impcas.ac.cn 

Mailing Address: 509 Nanchang Road, Lanzhou, 730000, China