Materials Irradiation Effect Group
Brief Introduction
Based on the Heavy Ions Research Facility in Lanzhou (HIRFL), the Materials Irradiation Effect Group mainly focuses on the single event effect in advanced electronic devices and radiation damage in wide-bandgap semiconductor, two-dimensional materials and insulator materials. The experimental terminals have been established and the relevant experimental techniques have been improved, continuously.
Research Fields
1. Single event effects of electronic devices
(1) Failure mechanisms of advanced electronic devices
(2) Dependence of SEE sensitivity on ion parameters
(3) Computer simulation of interaction and effect in electronic devices
2. Irradiation effects of materials induced by swift heavy ions
(1) Irradiation effects of wide-gap semiconductors
(2) Modification of two-dimensional materials and track formation
(3) New effects and computer simulation
(4) Materials under the extreme conditions
3. Irradiation experimental technique
(1) Heavy ion irradiation beamline construction
(2) Heavy ion detection technique
(3) High temperature and high pressure experimental technique
Achievements
1. J. Zeng*, P.C. Ma, S.X. Zhang, L.J. Xu, Z.Z. Li, P.F. Zhai, P.P. Hu, K. Maaz, Y.M. Sun, J. Liu*.Unrecovered ion-irradiated damage after thermal annealing in graphene field effect transistors, Applied Surface Science, 588(2022)153005.
2. Peipei Hu, Lijun Xu, Pengfei Zhai,Jian Zeng, Shengxia Zhang, Khan Maaz, Wensi Ai, Zongzhen Li, Youmei Sun, Yuan He, Jie Liu*.Evidence of defect-annealing effect in swift heavy-ion-irradiated indium phosphide,2022, doi.org/10.1002/jrs.6324
3. Jianxiong Lan, Pengfei Zhai*, Shui Nan, Lijun Xu, Jingjing Niu, Cheng Tian, Zongzhen Li, Weixing Li, Jie Liu*, Rodney C. Ewing. Phase stability of pre-irradiated CeO2 with swift heavy ions under high pressure up to 45 GPa, Journal of the American Ceramic Society, 105(2022)2889-2902.
4. Zongzhen Li, Jie Liu*, Pengfei Zhai, Li Liu, Lijun Xu, Shengxia Zhang, Peipei Hu, Jian Zeng. The higher-k phase formation in amorphous HfO2 films by swift heavy ion irradiation, Journal of Crystal Growth, 585(2022)126600.
5. Li Liu, Jie Liu*, Pengfei Zhai, Shengxia Zhang, Jian Zeng, Peipei Hu, Lijun Xu, Zongzhen Li. The variation of pinning efficiency in YBCO films containing columnar defects, Physica C: Superconductivity and its Applications, 592(2022)1354000.
6. S.X. Zhang*, J. Zeng, P.P. Hu, L. J. Xu, K. Maaz, Z.Z. Li, L. Liu, P.F. Zhai, W.S. Ai, J. Liu*. Effects of substrate on swift heavy ion irradiation induced defect engineering in MoSe2, Materials Chemistry and Physics, 277(2022)125624.
7. Shengxia Zhang, Peipei Hu, Lijun Xu, Hailong Chen, Khan Maaz, Pengfei Zhai, Zongzhen Li, Li Liu, Wensi Ai, Jian Zeng*, Jie Liu*. Exciton transitions in monolayer WS2 activated by swift heavy ion irradiation, The Journal of Physical Chemistry C, 125(2021)20389-20396.
8. Peipei Hu, Jian Zeng, Shengxia Zhang, Pengfei Zhai, Lijun Xu, Wensi Ai, Khan Maaz, Haizhou Xue, Zongzhen Li, Youmei Sun, Jie Liu*, Yuan He. A potential lattice damage scale in swift heavy ion irradiated InP, Journal of Raman Spectroscopy, 52(2021) 971-979.
9. Bing Ye*, Li-Hua Mo, Peng-Fei Zhai, Li Cai, Tao Liu, Ya-Nan Yin, You-Mei Sun, Jie Liu*. Impact of Heavy Ion Energy and Species on Single-Event Upset in Commercial Floating Gate Cells, Microelectronics Reliability, 120(2021)114128.
10. Li-Hua Mo, Bing Ye*, Jie Liu*, Jie Lou, You-Mei Sun, Chang Cai, Don-Qing Li, Pei-Xiong Zhao, Ze He. Neutron-induced single event upset simulation in Geant4 for three-dimensional die-stacked SRAM, Chinese Physics B, 30(2021)036103.
11. Wen-Si Ai, Jie Liu*, Qian Feng*, Peng-Fei Zhai, Pei-Pei Hu, Jian Zeng, Sheng-Xia Zhang, Zong-Zhen Li, Li Liu, Xiao-Yu Yan, You-Mei Sun. Degradation of β-Ga2O3 Schottky barrier diode under swift heavy ion irradiation, Chinese Physics B, 30(2021)056110.
12. Dongqing Li, Tianqi Liu, Peixiong Zhao, Zhenyu Wu, Tieshan Wang, Jie Liu*. A Strategy to Mitigate Single Event Upset in 14 nm CMOS Bulk FinFET Technology, Chinese Physics B, 2021. DOI:10.1088/1674-1056/ac3d7e.
13. Chang Cai, Tianqi Liu, Peixiong Zhao, Xue Fan, Hongyang Huang, Dongqing Li, Lingyun Ke, Ze He, Liewei Xu, Gengsheng Chen, Jie Liu*. Multiple layout-hardening comparation of SEU mitigated filp-flops in 22 nm UTBB FD-SOI technology, IEEE Transactions on Nuclear Science, 67(2020)374-381.
14. Liu Li, Liu Jie*, Zeng Jian, Zhai Peng-Fei, Zhang Sheng-Xia, Xu Li-Jun, Hu Pei-Pei, Li Zong-Zhen, Ai Wen-Si. Effect of swift heavy ions irradiation on the microstructure and current-carrying capability in YBa2Cu3O7-δ high temperature superconductor films, Acta Physica Sinica, 69(2020)077401.
15. Li Liu*, Jie Liu*, Shengxia Zhang, Jian Zeng, Pengfei Zhai, Peipei Hu, Lijun Xu, Zongzhen Li, Wensi Ai, Chuanbing Cai, Minjuan Li. Radiation effect of swift heavy ions on current-carrying capability of commercial YBCO coated conductors, Applied Physics A, 126(2020)435.
16. Peixiong Zhao, Tianqi Liu, Chang Cai, Ze He, Dongqing Li, Jie Liu*. Evaluation Method of Heavy-Ion-Induced Single-Event Upset in 3D-Stacked SRAMs, Electronics, 9:8(2020)1230.
17. Li-Jun Xu, Peng-Fei Zhai*, Sheng-Xia Zhang, Jian Zeng, Pei-Pei Hu, Zong-Zhen Li, Li Liu, You-Mei Sun, Jie Liu*. Characterization of swift heavy ion tracks in MoS2 by transmission electron microscopy, Chinese Physics B, 29:10(2020)106103.
18. Bing Ye*, Li-Hua Mo, Tao Liu, You-Mei Sun, Jie Liu*. Influence of Orbital Parameters on SEU Rate of Low-Energy Proton in Nano-SRAM Device, Symmetry, 12(2020)2030.
19. Dongqing Li*, Tianqi Liu*, Zhenyu Wu, Chang Cai, Peixiong Zhao, Ze He, Jie Liu*. An investigation of FinFET single-event latch-up characteristic and mitigation method, Microelectronics Reliability, 114(2020)113901.
20. Zongzhen Li, Jie Liu*, Pengfei Zhai*, Tianqi Liu, Jinshun Bi, Zhenxing Zhang, Shengxia Zhang, Peipei Hu, Lijun Xu, Jian Zeng, Youmei Sun. Latent Reliability Degradation of Ultrathin Amorphous HfO2 Dielectric After Heavy Ion Irradiation: The Impact of Nano-Crystallization, IEEE Electron Device Letters, 40(2019)1634–1637.
21. Pengfei Zhai*, Shuai Nan, Lijun Xu, Weixing Li, Zongzhen Li, Peipei Hu, Jian Zeng, Shengxia Zhang, Youmei Sun, Jie Liu*. Fine structure of swift heavy ion track in rutile TiO2, Nuclear Instruments and Methods in Physics Research B, 457(2019)72-79.
22. Zongzhen Li, Tianqi Liu, Jinshun Bi, Huijun Yao, Zhenxing Zhang, Shengxia Zhang, Jiande Liu, Pengfei Zhai*, Jie Liu*. Charge trapping effect in HfO2-based high-k gate dielectric stacks after heavy ion irradiation: The role of oxygen vacancy, Nuclear Instruments and Methods in Physics Research B, 459(2019)143-147.
23. Shengxia Zhang*, Jie Liu*, Jian Zeng, Peipei Hu, Kahn Maaz, Lijun Xu, Jinglai Duan, Pengfei Zhai, Zongzhen Li, Li Liu. Electronic transport in MoSe2 FETs modified by latent tracks created by swift heavy ion irradiation, Journal of Physics D: Applied Physics, 52(2019)125102.
24. Wensi Ai, Lijun Xu, Shuai Nan, Pengfei Zhai*, Weixing Li, Zongzhen Li, Peipei Hu, Jian Zeng, Shengxia Zhang, Li Liu, Youmei Sun, Jie Liu*. Radiation damage in β-Ga2O3 induced by swift heavy ions, Japanese Journal of Applied Physics, 58(2019)120914.
25. Shengxia Zhang*, Jie Liu*, Hua Xie, Lijun Xu, Peipei Hu, Jian Zeng, Zongzhen Li, Li Liu, Wensi Ai, Pengfei Zhai. Vibrational modes in La2Zr2O7 pyrochlore irradiated with disparate electrical energy losses, Chinese Physics B, 28(2019)116102.
26. Qinggang Ji, Jie Liu*, Dongqing Li, Tianqi Liu, Bing Ye, Peixiong Zhao, Youmei Sun. Effects of total ionizing dose on single event effect sensitivity of FRAMs, Microelectronics Reliability, 95(2019)1-7.
27. Yanan Yin, Jie Liu*, Tianqi Liu, Bing Ye, Qinggang Ji, Youmei Sun, Xinjie Zhou. Heavy-ion induced radiation effects in 50 nm NAND floating gate flash memories, Microelectronics Reliability, 102(2019)113450.
28. Peixiong Zhao, Tianqi Liu, Chang Cai, Dongqing Li, Qinggang Ji, Ze He, Pengfei Zhai, Youmei Sun, Song Gu, Jie Liu*. Heavy ion irradiation induced hard error in MTJ of the MRAM memory array, Microelectronics Reliability, 100-101(2019)113347.
29. Liewei Xu, Chang Cai*, Tianqi Liu, Lingyun Ke, Jun Yu, Chang Wu*. Design and verification of universal evaluation system for single event effect sensitivity measurement in very-large-scale integrated circuits, IEICE Electronics Express, 16(2019)20190196.
30. Chang Cai#, Peixiong Zhao#, Liewei Xu, Tianqi Liu*, Dongqing Li, Lingyun Ke, Ze He, Jie Liu*. SEU tolerance improvement in 22？nm UTBB FDSOI SRAM based on a simple 8T hardened cell, Microelectronics Reliability, 100-101(2019)113322.
31. Chang Cai#, Tianqi Liu#, Xiaoyuan Li, Jie Liu*, Zhangang Zhang, Chao Geng, Peixiong Zhao, Dongqing Li, Bing Ye, Qinggang Ji, Lihua Mo. Heavy-ion and pulsed-laser single event effects in 130-nm CMOS-based thin/thick gate oxide anti-fuse PROMs, Nuclear Science and Techniques, 30(2019)80.
32. Chang Cai, Shuai Gao, P. Zhao, Jian Yu, Kai Zhao, Liewei Xu, Dongqing Li, Ze He, Guangwen Yang, Tianqi Liu*, Jie Liu*. SEE sensitivity evaluation for commercial 16 nm SRAM-FPGA, Electronics, 8(2019)1531.
33. Song Gu*, Jie Liu, Jinshun Bi, Fazhan Zhao, Zhangang Zhang, Kai Xi, Kai Peng, Yingjun Zhang. The Impacts of Heavy Ion Energy on Single Event Upsets in SOI SRAMs, 65:5(2018)1091-1100.
34. Chang Cai, Xue Fan*, Jie Liu, Dongqing Li, Tianqi Liu*, Lingyun Ke, Peixiong Zhao, Ze He. Heavy-Ion Induced Single Event Upsets in Advanced 65 nm Radiation Hardened FPGAs, 8(2019)323.
35. Shengxia Zhang*, Jie Liu*, Jian Zeng, Peipei Hu, Lijun. Xu, Kahn Maaz, Pengfei Zhai, Jinglai Duan. Dynamic evolutions of swift heavy ion induced latent tracks under electron bombardment from TEM, Nuclear Instruments and Methods in Physics Research B, 429(2018)9-13.
36. Yanan Yin, Jie Liu*, Youmei Sun, Mingdong Hou, Tianqi Liu, Bing Ye, Qinggang Ji, Jie Luo, Peixiong Zhao. Anomalous annealing of floating gate errors due to heavy ion irradiation, Nuclear Instruments and Methods in Physics Research B, 418(2018)80-86.
37. Yanan Yin, Jie Liu*, Qinggang Ji, Peixiong Zhao, Tianqi Liu, Bing Ye, Jie Luo, Youmei Sun, Mingdong Hou. Influences of Total Ionizing Dose on Single Event Effect Sensitivity in Floating Gate Cells. Chinese Physics B, 27(2018)08613.
38. Peipei Hu, Jie Liu*, Shengxia Zhang, Kahn Maaz, Jian Zeng, Pengfei Zhai, Lijun Xu, Yanrong Cao, Jinglai Duan, Zongzhen Li, Youmei Sun, Xiaohua Ma. Degradation in AlGaN/GaN HEMTs irradiated with swift heavy ions: Role of latent tracks. Nuclear Instruments and Methods in Physics Research B, 430(2018)59-63.
39. Tianqi Liu, Jie Liu*, Kai Xi, Zhangang Zhang, Deyan He, Bing Ye, Yanan Yin, Qinggang Ji, Bin Wang, Jie Luo, Youmei Sun, Pengfei Zhai. Heavy ion radiation effects on a 130-nm COTS NVSRAM under different measurement conditions, IEEE Transactions on Nuclear Science, 65(2018)1119- 1126.
40. Jie Luo, Tieshan Wang, Dongqing Li, Tianqi Liu, Mingdong Hou, Youmei Sun, Jinglai Duan, Huijun Yao, Kai Xi, Bing Ye, Jie Liu*. Investigation of flux dependent sensitivity on single event effect in memory devices, Chinese Physics B, 27(2018)076101.
Photos
Contact
Prof. LIU Jie
Tel: +86-931-4969334
Email: j.liu@impcas.ac.cn
Mailing Address: 509 Nanchang Road, Lanzhou, 730000, China
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