Effective Surface Exfoliation of 4H-SiC Induced by He+ and O+ Coimplantation... ...Li Bingsheng, et al.----Institute of Modern Physics

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25 11, 2010

Effective Surface Exfoliation of 4H-SiC Induced by He⁺ and O⁺Coimplantation... ...Li Bingsheng, et al.

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